Seoul: Samsung Electronics Co. announced on Thursday that it has secured two prestigious awards at an international semiconductor conference, highlighting its advancements in next-generation memory technologies.

According to Yonhap News Agency, the South Korean technology behemoth was honored with the 3D and NAND Innovation Award for its V10 BV-NAND technology and the Next-Gen Memory Award for its LPDDR5X-PIM technology. These accolades were received at the Future of Memory and Storage 2026 conference, which took place in California.

Samsung's V10 BV-NAND is a cutting-edge V-NAND technology characterized by an ultra-high-layer architecture, comprising over 400 layers. This innovation utilizes bonding vertical technology to vertically bond wafers and features a three-stack structure that connects V-NAND cells across three layers. This design not only boosts storage capacity but also reduces power consumption and heat generation.

Meanwhile, the LPDDR5X-PIM represents the world's first low-power DRAM product to incorporate processing-in-memory technology into LPDDR5X memory. It processes data directly within the memory, significantly minimizing data movement and enhancing both performance and power efficiency. Samsung anticipates that this technology will be instrumental in AI accelerators and high-performance computing (HPC) systems.