California: Samsung Electronics Co. announced the unveiling of its next-generation high-bandwidth memory (HBM), named HBM4E, at an annual technology conference hosted by Nvidia Corp. This marks a significant development in Samsung's role as a memory solution provider for Nvidia's Vera Rubin AI platform, showcased during the Nvidia GTC 2026 event. According to Yonhap News Agency, Samsung Electronics displayed the HBM4E chip for the first time, which is set to deliver speeds of 16 gigabits per second per pin and a bandwidth of 4.0 terabytes per second. Last month, the company began the commercial shipment of its sixth-generation HBM, known as HBM4, which it claims provides unmatched performance for AI computing. This made Samsung the first globally to commercialize such an advanced chip. Samsung Electronics also revealed its hybrid copper bonding (HCB) technology, which allows for stacking more than 16 layers while decreasing thermal resistance by 20 percent compared to existing methods. This advancement unde rscores Samsung's capabilities in packaging solutions for next-generation HBM. The company emphasized the necessity of a robust AI system, like the Vera Rubin platform, for progress in the AI industry. Samsung plans to continue providing high-performance memory solutions to support this platform. The collaboration between Samsung and Nvidia aims to pioneer a shift in the global AI infrastructure paradigm. At the event, Samsung Electronics organized an exhibition booth with three zones: AI Factories, Local AI, and Physical AI. These zones showcased the company's next-generation chips designed to meet the growing demands of the AI industry.