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Samsung Electronics’ Next-Gen DRAM Secures Presidential Award at Korea Tech Festival

Seoul: Samsung Electronics Co.'s cutting-edge dynamic random-access memory (DRAM), GDDR7, has been honored with a prestigious presidential award at a major technology exhibition, the company announced on Wednesday. The next-generation DRAM, designed for the burgeoning artificial intelligence (AI) industry, was recognized at the Korea Tech Festival 2025, which commenced in Seoul for a three-day event.

According to Yonhap News Agency, the South Korean tech leader's 24-gigabit GDDR7 DRAM received accolades for its superior cost and energy efficiency over high bandwidth memory (HBM) products. The lightweight design of GDDR7 makes it particularly suitable for AI servers, meeting the increasing demand for generative graphic content. Industry experts note that Samsung Electronics' collaboration with U.S. tech giant Nvidia Corp. is poised to enhance the market presence of Samsung's GDDR7.

Kim Dong-won, a researcher at KB Securities Co., highlighted that Samsung's Pyeongtaek production line is set to more than double its capacity as Nvidia recently requested an expansion in the supply of GDDR7 products. In a strategic move to strengthen its memory business, Samsung launched a dedicated organization for its development during a recent corporate reshuffle in November.

In addition to Samsung Electronics' achievement, Samsung SDI Co. was awarded an industry minister award for its Samsung Battery Box (SBB), an all-in-one energy storage system (ESS) recognized for its fire safety and cost reduction features. "We have established industry-leading competitiveness in ESS safety technologies," Samsung SDI stated in a release, emphasizing their commitment to reinforcing their position in the domestic ESS market by combining the durability of prismatic batteries with advanced safety technologies.

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